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| PD - 93943 PROVISIONAL IRF6150 HEXFET(R) Power MOSFET RSS(on) max IS 0.036@VGS1,2 = -4.5V -7.9A 0.052@VGS1,2 = -2.5V -6.3A l l l l l Ultra Low RSS(on) per Footprint Area Low Thermal Resistance Bi-Directional P-Channel Switch Super Low Profile (<.8mm) Available Tested on Tape & Reel VSS -20V Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design that International Rectifier is well known for, provides the designer with an ex- S1 S2 G1 G2 tremely efficient and reliable device. The FlipFETTM package, is one-third the footprint of a comparable SO-8 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFETTM the best device for applications where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards. Absolute Maximum Ratings Parameter VSS IS @ TC = 25C IS @ TC = 70C ISM PD @TC = 25C PD @TC = 70C VGS TJ, TSTG Source- Source Voltage Continuous Current, VGS1 = VGS2 = -4.5V Continuous Current, VGS1 = VGS2 = -4.5V Pulsed Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 7.9 6.3 40 3.0 1.9 24 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Symbol RJA RJ-PCB Parameter Junction-to-Ambient Junction-to-PCB mounted Typ. 17 Max. 42 --- Units C/W www.irf.com 1 6/29/00 IRF6150 PROVISIONAL Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)SSS V(BR)SSS/TJ Parameter Source-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Source-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Source Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Miller Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RSS(on) VGS(th) gfs ISSS IGSS Qg Qgs QG1-S2 td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.45 TBD --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -TBD --- --- --- --- --- --- --- --- TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.036 VGS1 = VGS2 = -4.5V, IS = -7.9A 0.052 VGS1 = VGS2 = -2.5V, IS = -6.3A -1.2 V VSS = VGS, IS = -250A --- S VSS = -10V, IS = -7.9A -1.0 VSS = -20V, VGS = 0V A -25 VSS = -16V, VGS = 0V, TJ = 125C 100 VGS = 12V nA -100 VGS = -12V TBD IS = -TBDA TBD nC VSS = -16V TBD VGS = -5.0V --- VSS = -10V --- IS = -1.0A ns --- RG = 6.0 --- VGS = -5.0V --- VGS = 0V --- pF VSS = -15V --- = 1.0MHz Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Gate voltage applied to both gates. When mounted on 1 inch square 2oz copper on FR-4 2 www.irf.com PROVISIONAL IRF6150 Bi-Directional MOSFET Outline Dimension NOTES : 1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. 2. CONTROLLING DIMENSION: [INCH]. 3. LET TER DES IGNAT ION: S = SOURCE G = GAT E S1 S1 S2 S2 3.124 2X [.123] SK = SOURCE KELVIN IS = CURRENT SENSE E = EMIT TER 4. DIMENSIONAL TOLERANCES: BONDING PADS: < 0.635 T OLERANCE = + /- 0.013 < [.0250] TOLERANCE = + /- [.0005] > 0.635 T OLERANCE = + /- 0.025 > [.0250] TOLERANCE = + /- [.0010] < 1.270 T OLERANCE = + /- 0.102 < [.050] T OLERANCE = + /- [.004] > 1.270 T OLERANCE = + /- 0.203 > [.050] T OLERANCE = + /- [.008] WIDT H & LENGT H OVERALL DIE: WIDT H & LENGT H S1 S1 S2 S2 0.20 16X O [.008] S1 S1 S2 S2 G1 S1 S2 G2 5. UNLES S OTHERWISE NOT ED ALL DIE ARE GEN III 4X 0.80 [.032] 4X 0.40 [.016] IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice.6/00 www.irf.com 3 |
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